Graphene/Al sub(2)O sub(3)/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sha...

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Bibliographic Details
Published in:IEEE sensors journal 2016-09, Vol.16 (18), p.6903-6907
Main Authors: Seol, Jeong-Hoon, Kang, Sang-Bum, Lee, Chang-Ju, Won, Chul-Ho, Park, Hongsik, Lee, Jung-Hee, Hahm, Sung-Ho
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum oxide
Detection
Diodes
Gallium nitrides
Graphene
Rejection
Sensors
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Summary:We propose graphene as a Schottky metal electrode material for an AlGaN/GaN heterostructure layer-based metal-insulator-semiconductor-insulator-metal (MISIM)-type UV sensor. The fabricated AlGaN/GaN MISIM UV sensor showed two distinguishable sensing windows, namely, a UV-A and a UV-B region with sharp cutoff characteristic. The graphene-electrode UV sensor had a lower dark current density and better UV-to-visible rejection ratio than that of a Ni-electrode UV sensor.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2016.2594185