Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light‐emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro‐LED arrays ar...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-09, Vol.28 (35), p.7688-7694
Main Authors: Chung, Kunook, Yoo, Hyobin, Hyun, Jerome K., Oh, Hongseok, Tchoe, Youngbin, Lee, Keundong, Baek, Hyeonjun, Kim, Miyoung, Yi, Gyu‐Chul
Format: Article
Language:English
Subjects:
Arrays
Bending
epitaxial lateral overgrowth
Epitaxy
flexible devices
Foils
gallium nitride microstructures
Gallium nitrides
Graphene
graphene substrates
Light-emitting diodes
light‐emitting diode arrays
Masks
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Summary:The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light‐emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro‐LED arrays are transferred onto Cu foil by a simple lift‐off technique, which works reliably under various bending conditions.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601894