Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H sub(2)Pc heterojunction

A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H sub(2)Pc are fabricated by vacuum deposition of the CuPc and H sub(2)Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30-40 mu m. For the cur...

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Bibliographic Details
Published in:Chinese physics B 2015-11, Vol.24 (11)
Main Authors: Karimov, Khasan S, Ahmad, Zubair, Touati, Farid, Mahroof-Tahir, M, Rehman, M Muqeet, Abbas, S Zameer
Format: Article
Language:English
Subjects:
Charge transfer
Copper
Devices
Electric potential
Electrodes
Silver
Switching
Volt-ampere characteristics
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Summary:A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H sub(2)Pc are fabricated by vacuum deposition of the CuPc and H sub(2)Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30-40 mu m. For the current-voltage (I-V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases ~ 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/24/11/116102