Characterization of Ge Doping on Sb sub(2)Te sub(3) for High-Speed Phase Change Memory Application

The phase change material of Ge-doped Sb sub(2)Te sub(3) is shown to have higher crystallization temperature and better thermal stability compared with pure Sb sub(2)Te sub(3). Ge sub(0.11)Sb sub(2)Te sub(3) alloys are considered to be a potential candidate for phase change random access memories, a...

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Bibliographic Details
Published in:Chinese physics letters 2015-07, Vol.32 (7), p.077302-1-077302-3
Main Authors: Zhu, Yue-Qin, Zhang, Zhong-Hua, Song, San-Nian, Xie, Hua-Qing, Song, Zhi-Tang, Shen, Lan-Lan, Li, Le, Wu, Liang-Cai, Liu, Bo
Format: Article
Language:English
Subjects:
Alloys
Crystallization
Doping
High speed
Phase change
Programming
Random access memory
Switching
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Summary:The phase change material of Ge-doped Sb sub(2)Te sub(3) is shown to have higher crystallization temperature and better thermal stability compared with pure Sb sub(2)Te sub(3). Ge sub(0.11)Sb sub(2)Te sub(3) alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge sub(2)Sb sub(2)Te sub(5). In addition, Ge sub(0.11)Sb sub(2)Te sub(3) presents extremely rapid reverse switching speed (10 ns), and up to 10 super(5) programming cycles are obtained with stable set and reset resistances.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/7/077302