Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude diff...

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Bibliographic Details
Published in:Chinese physics letters 2015-06, Vol.32 (6), p.184-187
Main Author: 范茜 陈后鹏 王倩 王月青 吕士龙 刘燕 宋志棠 冯高明 刘波
Format: Article
Language:English
Subjects:
Arrays
CMOS
CMOS技术
Performance enhancement
Phase change
Programming
Random access memory
Strategy
Thermal simulation
参数设置
存储器阵列
性能改进
相位变化
编程方法
随机存取
高分辨透射电子显微镜
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Summary:A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/6/068301