Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive‐switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great po...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-10, Vol.28 (37), p.8227-8233
Main Authors: Cui, Ajuan, Liu, Zhe, Dong, Huanli, Yang, Fangxu, Zhen, Yonggang, Li, Wuxia, Li, Junjie, Gu, Changzhi, Zhang, Xiaotao, Li, Rongjin, Hu, Wenping
Format: Article
Language:English
Subjects:
Arrays
Chemical etching
Electrodes
Filaments
Migration
nanofabrication
nanogap electrodes
Nanostructure
nonvolatile resistive switches
Random access memory
Switching
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Summary:Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive‐switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh‐density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201603124