Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs

The impact of the AC signal oscillator level on the effective mobility measurement by split C–V technique in MOSFETs is investigated. It is found that, due to strong nonlinearity below threshold, the gate-to-channel capacitance and, by turn, the channel inversion charge increases linearly with the o...

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Bibliographic Details
Published in:Electronics letters 2016-08, Vol.52 (17), p.1492-1493
Main Authors: Karatsori, T.A, Theodorou, C.G, Dimitriadis, C.A, Ghibaudo, G
Format: Article
Language:English
Subjects:
AC signal oscillator level
capacitance
carrier mobility
channel inversion charge
Channels
Charge
effective mobility measurement
Electronics
Engineering Sciences
gate voltage
gate‐to‐channel capacitance
Inversions
Mathematical models
Micro and nanotechnologies
Microelectronics
MOSFET
MOSFETs
nonlinearity
Oscillators
physical model
semiconductor device measurement
semiconductor device models
Semiconductor technology
split C–V technique
Voltage
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Summary:The impact of the AC signal oscillator level on the effective mobility measurement by split C–V technique in MOSFETs is investigated. It is found that, due to strong nonlinearity below threshold, the gate-to-channel capacitance and, by turn, the channel inversion charge increases linearly with the oscillator level. As a consequence, the extracted effective mobility decreases linearly with the oscillator level, resulting in a huge underestimation of the effective mobility in weak inversion. A physical model explaining these behaviours is developed, which enables to obtain a quantitative description of both inversion charge and effective mobility variations with the oscillator level and the gate voltage.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2016.1715