Highly Stable and Effective Doping of Graphene by Selective Atomic Layer Deposition of Ruthenium

The sheet resistance of graphene synthesized by chemical vapor deposition is found to be significantly reduced by the selective atomic layer deposition (ALD) of Ru onto defect sites such as wrinkles and grain boundaries. With 200 ALD cycles, the sheet resistance is reduced from ∼500 to

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Bibliographic Details
Published in:ACS applied materials & interfaces 2017-01, Vol.9 (1), p.701-709
Main Authors: Kim, Minsu, Kim, Ki-Ju, Lee, Seung-Joon, Kim, Hyun-Mi, Cho, Seong-Yong, Kim, Min-Sik, Kim, Soo-Hyun, Kim, Ki-Bum
Format: Article
Language:English
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Summary:The sheet resistance of graphene synthesized by chemical vapor deposition is found to be significantly reduced by the selective atomic layer deposition (ALD) of Ru onto defect sites such as wrinkles and grain boundaries. With 200 ALD cycles, the sheet resistance is reduced from ∼500 to
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b12622