1-2 GHz 2 mW injection-locked ring oscillator based phase shifter in 0.18 mu m CMOS technology

A new phase shifter based on injection-locked ring oscillator is proposed. By using a multi-stage phase generator with voltage-controlled injection locking technique, the proposed phase shifter is able to generate a flexible combination of coarse and fine-tuned phase delays over a wide range of oper...

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Published in:Electronics letters 2016-10, Vol.52 (22), p.1858-1860
Main Authors: Jin, Cai Long, Yu, Xiao Peng, Sui, Wen-Quan
Format: Article
Language:English
Subjects:
CMOS
Delay
Electronics
Injection locking
Oscillators
Phase shifters
Power consumption
Silicon
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creator Jin, Cai Long
Yu, Xiao Peng
Sui, Wen-Quan
description A new phase shifter based on injection-locked ring oscillator is proposed. By using a multi-stage phase generator with voltage-controlled injection locking technique, the proposed phase shifter is able to generate a flexible combination of coarse and fine-tuned phase delays over a wide range of operating frequencies while a small silicon area is maintained. Fabricated in a 0.18 mu m RF CMOS process which only occupies 50 x 40 mu m, a proposed three-stage phase shifter achieves flexible phase delays and a measured operating frequency up to 2 GHz with a maximum power consumption of 2 mW from a 1.8 V supply.
doi_str_mv 10.1049/el.2016.2501
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source IET Digital Library; Wiley Online Library Open Access
subjects CMOS
Delay
Electronics
Injection locking
Oscillators
Phase shifters
Power consumption
Silicon
title 1-2 GHz 2 mW injection-locked ring oscillator based phase shifter in 0.18 mu m CMOS technology
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