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Electronic and magnetic properties regulation of finite to infinite half sandwich organo-transition-metal-complexes functionalized graphene
Using first principles calculations, we systematically investigated the structural, electronic and magnetic properties of half-sandwiched organo-ligand (OL)-transition metal (TM) ligands functionalized single-layer graphene (SLG) with diverse arrangement patterns, including zero-dimension (0D) TM n...
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Published in: | RSC advances 2016-01, Vol.6 (100), p.97953-97960 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Using first principles calculations, we systematically investigated the structural, electronic and magnetic properties of half-sandwiched organo-ligand (OL)-transition metal (TM) ligands functionalized single-layer graphene (SLG) with diverse arrangement patterns, including zero-dimension (0D) TM
n
OL– (OL: Bz = C
6
H
6
, Np = C
10
H
8
, Ant = C
14
H
10
, TM = Ti, Cr, Mn, Fe,
n
= 1, 2, 3) and 1D organometallic molecule wires, [TMC
4
H
2
]
∞
and [TM
2
C
6
H
2
]
∞
. In the studied structures, most TM atoms favor the hollow site of graphene, while a few favor the top site. All systems are chemically stable and the half-sandwiched TM
n
OL– ligands are covalently bonded with graphene. Interestingly, most TM
n
OL@Gs are ferromagnetic with the largest magnetic moment of 2.96
μ
B
for Cr
3
Ant@G
77
. In addition, ferri–ferromagnetic properties are found for Fe
2
Np@G
77
and Fe
3
Ant@G
77
, while antiferromagnetic properties are found for Ti
3
Ant@G
77
. With the exception of FeBz@G
33
, all the TMBz@G
33
and TMBz@G
66
are semiconductors and the band gap of CrBz@G
33
is as large as ∼1.0 eV. As for FeBz@G, the gap for graphene at the Dirac point is opened to 0.673 eV, 0.581 eV and 0.148 eV within the 4 × 4, 5 × 5 and 6 × 6 supercell, respectively. Moreover, the band gaps for TM
2
Np@G
77
and TM
3
Ant@G
77
are largely reduced due to the increased coverage of TM atoms. Furthermore, robust magnetic and electronic properties are found for [TMC
4
H
2
]
∞
@G and [TMC
6
H
2
]
∞
@G, in which the magnetic moment of [MnC
4
H
2
]
∞
@G and [FeC
6
H
2
]
∞
@G per cell unit is rather large at around 2.36
μ
B
and 4.43
μ
B
, respectively. Most [TMC
4
H
2
]
∞
@Gs and [TMC
6
H
2
]
∞
@Gs are metals, while [MnC
4
H
2
]
∞
@G is transformed to be a semiconductor. |
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ISSN: | 2046-2069 2046-2069 |
DOI: | 10.1039/C6RA19951H |