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Self-formation of hexagonal nanotemplates for growth of pyramidal quantum dots by metalorganic vapor phase epitaxy on patterned substrates
We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111)B substrates patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase epitaxy and its role in producing high-symmetry, site-controlled quantum dots (QDs). By combining atomic force microscopy mea...
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Published in: | Nano research 2016-11, Vol.9 (11), p.3279-3290 |
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creator | Surrente, Alessandro Carron, Romain Gallo, Pascal Rudra, Alok Dwir, Benjamin Kapon, Eli |
description | We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111)B substrates patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase epitaxy and its role in producing high-symmetry, site-controlled quantum dots (QDs). By combining atomic force microscopy measurements on progressively thicker GaAs epitaxial layers with kinetic Monte Carlo growth simulations, we demonstrate self-maintained symmetry elevation of the QD formation sites from three-fold to six-fold symmetry. This symmetry elevation stems from adatom fluxes directed towards the high-curvature sites of the template, resulting in the formation of a fully three-dimensional hexagonal template after the deposition of relatively thin GaAs layers. We identified the growth conditions for consistently achieving a hexagonal pyramid bottom, which are useful for producing high-symmetry QDs for efficient generation of entangled photons. |
doi_str_mv | 10.1007/s12274-016-1206-7 |
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By combining atomic force microscopy measurements on progressively thicker GaAs epitaxial layers with kinetic Monte Carlo growth simulations, we demonstrate self-maintained symmetry elevation of the QD formation sites from three-fold to six-fold symmetry. This symmetry elevation stems from adatom fluxes directed towards the high-curvature sites of the template, resulting in the formation of a fully three-dimensional hexagonal template after the deposition of relatively thin GaAs layers. 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By combining atomic force microscopy measurements on progressively thicker GaAs epitaxial layers with kinetic Monte Carlo growth simulations, we demonstrate self-maintained symmetry elevation of the QD formation sites from three-fold to six-fold symmetry. This symmetry elevation stems from adatom fluxes directed towards the high-curvature sites of the template, resulting in the formation of a fully three-dimensional hexagonal template after the deposition of relatively thin GaAs layers. We identified the growth conditions for consistently achieving a hexagonal pyramid bottom, which are useful for producing high-symmetry QDs for efficient generation of entangled photons.</description><subject>Adatoms</subject><subject>Atomic force microscopy</subject><subject>Atomic/Molecular Structure and Spectra</subject><subject>Biomedicine</subject><subject>Biotechnology</subject><subject>Chemistry and Materials Science</subject><subject>Computer simulation</subject><subject>Condensed Matter Physics</subject><subject>Curvature</subject><subject>Elevation</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Epitaxy</subject><subject>Fluxes</subject><subject>Formations</subject><subject>Gallium arsenide</subject><subject>Growth conditions</subject><subject>Materials Science</subject><subject>Metalorganic chemical vapor 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By combining atomic force microscopy measurements on progressively thicker GaAs epitaxial layers with kinetic Monte Carlo growth simulations, we demonstrate self-maintained symmetry elevation of the QD formation sites from three-fold to six-fold symmetry. This symmetry elevation stems from adatom fluxes directed towards the high-curvature sites of the template, resulting in the formation of a fully three-dimensional hexagonal template after the deposition of relatively thin GaAs layers. We identified the growth conditions for consistently achieving a hexagonal pyramid bottom, which are useful for producing high-symmetry QDs for efficient generation of entangled photons.</abstract><cop>Beijing</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-016-1206-7</doi><tpages>12</tpages></addata></record> |
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subjects | Adatoms Atomic force microscopy Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Chemistry and Materials Science Computer simulation Condensed Matter Physics Curvature Elevation Epitaxial growth Epitaxial layers Epitaxy Fluxes Formations Gallium arsenide Growth conditions Materials Science Metalorganic chemical vapor deposition Nanostructure Nanotechnology Photons Pyramids Quantum dots Quantum theory Research Article Substrates Symmetry Thin films Vapors 六边形 图形衬底 外延法 有机金属 模板 气相外延 自形成 量子点 |
title | Self-formation of hexagonal nanotemplates for growth of pyramidal quantum dots by metalorganic vapor phase epitaxy on patterned substrates |
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