Design, Fabrication, and Measurement of the Low-Loss SOI-Based Dielectric Microstrip Line and its Components

A low-loss dielectric microstrip line (DML) integrated circuit based on silicon (Si) technology is proposed for THz applications in this paper. Using the DML, a coupler and a crossover are designed. In the proposed technology, all THz passive components are made of high-resistivity silicon on insula...

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Bibliographic Details
Published in:IEEE transactions on terahertz science and technology 2016-09, Vol.6 (5), p.696-705
Main Authors: Hao-Tian Zhu, Quan Xue, Jia-Nan Hui, Pang, Stella W.
Format: Article
Language:English
Subjects:
Coupler
Couplers
crossover
Crossovers
Dielectric measurement
dielectric microstrip line (DML)
dielectric transmission line
Dielectrics
Fabrication
Insulators
integrated circuit
Microstrip
Microstrip lines
Passive components
Silicon
Silicon-on-insulator
terahertz (THz)
Transmission line measurements
Wafers
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Summary:A low-loss dielectric microstrip line (DML) integrated circuit based on silicon (Si) technology is proposed for THz applications in this paper. Using the DML, a coupler and a crossover are designed. In the proposed technology, all THz passive components are made of high-resistivity silicon on insulator (SOI) wafer. To fabricate the proposed transmission line and its components, we developed a high-precision fabrication process for the SOI wafer. A non-contact measurement technology is used to test the fabricated samples. The measured loss per wavelength of DML ranges from 0.0082 to 0.042 dB/λ over 750-925 GHz. The measured isolation of the crossover is 25.45 ± 5.54 dB, and the measured coupler factor of the coupler is -13.22 ± 3.23 dB.
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2016.2585345