Simulation and fabrication of thin film bulk acoustic wave resonator

In this paper, we present the simulation and fabrication of a thin film bulk acoustic resonator （FBAR）. In order to improve the accuracy of simulation, an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration. The...

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Bibliographic Details
Published in:Journal of semiconductors 2016-07, Vol.37 (7), p.86-91
Main Author: 韩茜茜 欧毅 李志刚 欧文 陈大鹏 叶甜春
Format: Article
Language:English
Subjects:
Bulk acoustic wave devices
CMOS
CMOS工艺
Computer simulation
Coupling
Electrodes
Resonators
Semiconductors
Thin films
串联谐振
仿真精度
体声波
制备
并联谐振
薄膜
谐振器
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Summary:In this paper, we present the simulation and fabrication of a thin film bulk acoustic resonator （FBAR）. In order to improve the accuracy of simulation, an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration. The resonators were fabricated by tile eight inch CMOS process, and the measurements show that the improved Mason model is more accurate than a simple Mason model. The Qs （Q at series resonance）, Qp （Q at parallel resonance）, Qmax and k2 of the FBAR were measured to be 695, 814, 1049, and 7.01% respectively, showing better performace than previous reports.
ISSN:1674-4926
DOI:10.1088/1674-4926/37/7/074009