Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon

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Bibliographic Details
Published in:Physical review letters 1985-09, Vol.55 (14), p.1482-1485
Main Authors: WILLIAMS, J. S, ELLIMAN, R. G, BROWN, W. L, SEIDEL, T. E
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.55.1482