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In-plane transport properties of heavily delta -doped GaAs n-i-p-i superlattices: Metal-insulator transition, weak and strong localization

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Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1996-11, Vol.54 (19), p.13980-13995
Main Authors: Schmidt, T, Müller, SG, Gulden, KH, Metzner, C, Döhler, GH
Format: Article
Language:English
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ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.54.13980