Dimer-adatom-stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2 x 8) to Si(111)-(2 x 2), -(5 x 5), -(7 x 7), and -(9 x 9) with scanning tunneling microscopy

Saved in:
Bibliographic Details
Published in:Physical review. B, Condensed matter Condensed matter, 1989-01, Vol.39 (3), p.1633-1647
Main Authors: Becker, RS, Swartzentruber, BS, Vickers, JS, Klitsner, T
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0163-1829
DOI:10.1103/PhysRevB.39.1633