Thermal-equilibrium defect processes in hydrogenated amorphous silicon

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Bibliographic Details
Published in:Physical review letters 1986-11, Vol.57 (19), p.2450-2453
Main Authors: SMITH, Z. E, ALJISHI, S, SLOBODIN, D, CHU, V, WAGNER, S, LENAHAN, P. M, ATYA, R. R, BENNETT, M. S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.57.2450