Passivation of shallow acceptors by H in Si: a microscopic study by perturbed angular correlations

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Published in:Physical review letters 1987-11, Vol.59 (18), p.2087-2090
Main Authors: WICHERT, T, SKUDLIK, H, DEICHER, M, GRÜBEL, G, KELLER, R, RECKNAGEL, E, SONG, L
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Impurities: concentration, distribution, and gradients
Physics
Structure of solids and liquids
crystallography
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cited_by cdi_FETCH-LOGICAL-c398t-d8acc3160bcfc0f5ac6831a676ad3086c00b73413dc79800c22efec8d35bfb783
cites cdi_FETCH-LOGICAL-c398t-d8acc3160bcfc0f5ac6831a676ad3086c00b73413dc79800c22efec8d35bfb783
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container_issue 18
container_start_page 2087
container_title Physical review letters
container_volume 59
creator WICHERT, T
SKUDLIK, H
DEICHER, M
GRÜBEL, G
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SONG, L
description
doi_str_mv 10.1103/physrevlett.59.2087
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source American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)
subjects Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Impurities: concentration, distribution, and gradients
Physics
Structure of solids and liquids
crystallography
title Passivation of shallow acceptors by H in Si: a microscopic study by perturbed angular correlations
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