STM analyses of surface phenomena in Si(1 0 0) under proton irradiation

Detailed investigation of surface phenomena (sputtering, blistering, flaking) at silicon irradiated with 700 keV protons to fluences in the range of 10 16–10 18 p/cm 2 was carried out with the help of an open-air scanning tunneling microscope of original design. Multiple STM images of irradiated sam...

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Bibliographic Details
Published in:Ultramicroscopy 2000-02, Vol.82 (1), p.111-117
Main Authors: Kozodaev, M.A., Makeev, O.N., Suvorov, A.L.
Format: Article
Language:English
Subjects:
Blistering
Proton irradiation
Silicon
STM
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Summary:Detailed investigation of surface phenomena (sputtering, blistering, flaking) at silicon irradiated with 700 keV protons to fluences in the range of 10 16–10 18 p/cm 2 was carried out with the help of an open-air scanning tunneling microscope of original design. Multiple STM images of irradiated sample surfaces containing both intact and broken blisters were analyzed, and their distributions by sizes and evolution under thermal annealing estimated.
ISSN:0304-3991
1879-2723
DOI:10.1016/S0304-3991(99)00142-4