Oxygen-related intrinsic defects in glassy SiO2: interstitial ozone molecules

Interstitial O3 molecules in 7.9 eV photon-irradiated silica are identified. Their optical absorption band at 4.8 eV nearly coincides with the 4.8 eV band of nonbridging oxygen hole centers. The O3-related band is distinguished by a smaller halfwidth (0.84 vs 1. 05 eV), by susceptibility to ultravio...

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Bibliographic Details
Published in:Physical review letters 2000-01, Vol.84 (2), p.302-305
Main Authors: Skuja, L, Hirano, M, Hosono, H
Format: Article
Language:English
Online Access:Get full text
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Summary:Interstitial O3 molecules in 7.9 eV photon-irradiated silica are identified. Their optical absorption band at 4.8 eV nearly coincides with the 4.8 eV band of nonbridging oxygen hole centers. The O3-related band is distinguished by a smaller halfwidth (0.84 vs 1. 05 eV), by susceptibility to ultraviolet bleaching, by lack of correlation to the 1.9 eV luminescence band, and by rise of a singlet O2 luminescence band at 0.974 eV during photobleaching. This identification solves a long controversy on the nature of optical bands in silica and gives a tool for studying the mobility of atomic oxygen in SiO2.
ISSN:1079-7114
DOI:10.1103/PhysRevLett.84.302