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Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure
2D black phosphorus (BP) and rhenium dichalcogenides (ReX2, X = S, Se) possess intrinsic in‐plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired their novel applications in electronics, photonics, and optoelectronics. Different from BP with poor e...
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Published in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2017-03, Vol.13 (12), p.n/a |
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Main Authors: | , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | 2D black phosphorus (BP) and rhenium dichalcogenides (ReX2, X = S, Se) possess intrinsic in‐plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired their novel applications in electronics, photonics, and optoelectronics. Different from BP with poor environmental stability, ReX2 has low‐symmetry distorted 1T structures with excellent stability. In ReX2, the electronic structure is weakly dependent on layer numbers, which restricts their property tunability and device applications. Here, the properties are tuned, such as optical bandgap, Raman anisotropy, and electrical transport, by alloying 2D ReS2 and ReSe2. Photoluminescence emission energy of ReS2(1−
x
)Se2
x
monolayers (x from 0 to 1 with a step of 0.1) can be continuously tuned ranging from 1.62 to 1.31 eV. Polarization behavior of Raman modes, such as ReS2‐like peak at 212 cm−1, shifts as the composition changes. Anisotropic electrical property is maintained in ReS2(1−
x
)Se2
x
with high electron mobility along b‐axis for all compositions of ReS2(1−
x
)Se2
x
.
2D rhenium dichalcogenides alloys are investigated by Raman spectroscopy, photoluminescence, and electrical transport measurement. Composition‐dependent Raman anisotropy is revealed by angle‐resolved polarized Raman spectroscopy and transmission electron microscopy. Anisotropic electrical transport is observed in all ReS2(1−
x
)Se2
x
alloys with maximum mobility along b axis. |
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ISSN: | 1613-6810 1613-6829 |
DOI: | 10.1002/smll.201603788 |