Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs

This research studies the effects of post-metal deposition annealing temperature on degradation induced by positive bias stress (PBS) in TiN/HfO2 n-channel fin field-effect transistors (FinFETs). The initial electrical characteristics possess higher threshold voltage, transconductance and on-state c...

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Bibliographic Details
Published in:Thin solid films 2016-12, Vol.620, p.30-33
Main Authors: Lin, Chien-Yu, Chang, Ting-Chang, Liu, Kuan-Ju, Tsai, Jyun-Yu, Chen, Ching-En, Liu, Hsi-Wen, Lu, Ying-Hsin, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung
Format: Article
Language:English
Subjects:
Annealing
Degradation
Deposition
Devices
FinFET
Hafnium oxide
High-k/metal gate
n-MOSFETs
Oxygen
PBTI
Threshold voltage
Trapping
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Summary:This research studies the effects of post-metal deposition annealing temperature on degradation induced by positive bias stress (PBS) in TiN/HfO2 n-channel fin field-effect transistors (FinFETs). The initial electrical characteristics possess higher threshold voltage, transconductance and on-state current in high-annealing temperature devices. In addition, PBS-induced degradation was found to be more severe in high-annealing temperature devices due to more high-k bulk traps. However, in these devices, oxygen vacancies are generated within HfO2 since oxygen is more likely to diffuse toward the interface layer (IL) and repair Si/SiO2 dangling bonds. Furthermore, using charge-pumping and C–V measurements, less interface trapping and a thicker IL were found in high-annealing temperature devices, verifying the proposed model. •Oxygen diffusion affects device performance.•Dipoles are induced in the HfO2/SiO2 interface.•Dipole leads to Vth shift.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2016.08.072