Continuous wave terahertz radiation from antennas fabricated on C super(12)-irradiated semi-insulating GaAs

We demonstrate continuous wave (CW) terahertz generation from antennas fabricated on C super(12)-irradiated semi-insulating (SI) GaAs substrates. The dark current drawn by the antennas fabricated on irradiated substrates is ~3 to 4 orders of magnitude lower compared to antennas fabricated on un-irra...

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Bibliographic Details
Published in:Optics letters 2015-10, Vol.40 (19), p.4540-4543
Main Authors: Deshmukh, Prathmesh, Mendez-Aller, M, Singh, Abhishek, Pal, Sanjoy, Prabhu, S S, Nanal, Vandana, Pillay, R G, Dohler, G H, Preu, S
Format: Article
Language:English
Subjects:
Antennas
Continuous wave
Gallium arsenide
Irradiation
Photocurrent
Silicon substrates
Substrates
Voltage
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Summary:We demonstrate continuous wave (CW) terahertz generation from antennas fabricated on C super(12)-irradiated semi-insulating (SI) GaAs substrates. The dark current drawn by the antennas fabricated on irradiated substrates is ~3 to 4 orders of magnitude lower compared to antennas fabricated on un-irradiated substrates, while the photocurrents decrease by only ~1.5 orders of magnitude. This can be attributed to the strong reduction of the carrier lifetime that is 2.5 orders of magnitude, with values around [tau] sub(rec)=0.2ps. Reduced thermal heating allows for higher bias voltages to the irradiated antenna devices resulting in higher CW terahertz power, just slightly lower than that of low-temperature grown GaAs (LT GaAs)at similar excitation conditions.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.40.004540