An efficient parameter extraction method for GaN HEMT small‐signal equivalent circuit model

Summary This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistors small‐signal equivalent circuit model. The algorithm combines parameter scanning and iteration methods to solve the problem of error accumulation in conventional methods and is implemen...

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Bibliographic Details
Published in:International journal of numerical modelling 2017-01, Vol.30 (1), p.np-n/a
Main Authors: Wen, Zhang, Xu, Yuehang, Wang, Changsi, Zhao, Xiaodong, Xu, Ruimin
Format: Article
Language:English
Subjects:
Algorithms
Equivalent circuits
Extraction
GaN HEMT
High electron mobility transistors
iteration
Mathematical models
Matlab
parameter extraction
Parameters
Semiconductor devices
small‐signal modeling
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Summary:Summary This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistors small‐signal equivalent circuit model. The algorithm combines parameter scanning and iteration methods to solve the problem of error accumulation in conventional methods and is implemented in matlab programming. By using the iteration method, the algorithm each time uses more accurate element values thus makes the results converge to the optimal value faster. A 20‐element small‐signal equivalent circuit model of GaN high electron mobility transistors is used to validate the proposed algorithm, and the results show that the calculated S‐parameters agree well with the measured S‐parameters within the frequency range of 0.1 to 40 GHz. Copyright © 2015 John Wiley & Sons, Ltd.
ISSN:0894-3370
1099-1204
DOI:10.1002/jnm.2127