Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio

• Published in: Applied surface science 2017-01, Vol.392, p.817-825
• Main Authors: Ozdemir, Samet, Suyolcu, Y. Eren, Turan, Servet, Aslan, Bulent
• Format: Article
• Language: English
• Subjects: Conservation; Diffraction; Excitation spectra; Gallium arsenide; Grounds; Indium arsenides; Molecular beam epitaxy; Photoluminescence; Quantum dot; Quantum dots; Self-assembled; Thickness
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2016.08.162

•Effects of systematically changed growth conditions on InAs/GaAs QDs were studied.•Growths were optimized for low As/In flux ratio to obtain well-resolved PL spectra.•XRD rocking curve signal fitting was used to analyze the samples.•XRD analysis reflects the overall tendency of the QD density and WL behavior. We report on the growth and characterization of self-assembled InAs/GaAs quantum dots (QDs). The influence of the systematically changed growth conditions on the opto-electronic and structural properties of the QDs were investigated. Combination of the amount of the deposited InAs, growth temperature and growth rate were optimized for low As/In flux ratio to obtain well-resolved ground and excited states in the low temperature photoluminescence (PL) spectra. SEM and TEM techniques were also used for the characterization of QDs. The results were evaluated simply through the conservation of mass approximation and the x-ray diffraction measurements with fitted curves. The extracted InAs and wetting layer thicknesses were brought out that the XRD analysis reflects the overall tendency of the QD density change and WL behaviors in response to the changes in growth conditions.