Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities

A very high hole mobility of 15 cm2 V−1 s−1 along with negligible hysteresis are demonstrated in transistors with an organic–inorganic perovskite semiconductor. This high mobility results from the well‐developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, a...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-12, Vol.28 (46), p.10275-10281
Main Authors: Matsushima, Toshinori, Hwang, Sunbin, Sandanayaka, Atula S. D., Qin, Chuanjiang, Terakawa, Shinobu, Fujihara, Takashi, Yahiro, Masayuki, Adachi, Chihaya
Format: Article
Language:English
Subjects:
Conversion
Crystallites
Density
field-effect transistors
Hole mobility
Hysteresis
organic-inorganic perovskites
Perovskites
Semiconductor devices
Semiconductors
surface treatment
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Summary:A very high hole mobility of 15 cm2 V−1 s−1 along with negligible hysteresis are demonstrated in transistors with an organic–inorganic perovskite semiconductor. This high mobility results from the well‐developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top‐contact/top‐gate structure with surface treatment and MoOx hole‐injection layers.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201603126