Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO sub(2) Structures

Using photo-luminescence, infrared spectroscopy, and electron spin resonance technique, the silicon dioxide films with embedded silicon nanocrystals (nc-Si/SiO sub(2) structures) have been investigated after gamma -irradiation with the dose 210 super(7) rad and subsequent annealing at 450 degree C i...

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Bibliographic Details
Published in:Nanoscale research letters 2016-12, Vol.11 (1), p.1-8
Main Authors: Lisovskyy, Igor, Voitovych, Mariia, Litovchenko, Volodymyr, Voitovych, Vasyl, Nasieka, Iurii, Bratus, Viktor
Format: Article
Language:English
Subjects:
Bonding
Hydrogen
Luminescence
Nanostructure
Photoluminescence
Radiation effects
Silicon
Silicon dioxide
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Summary:Using photo-luminescence, infrared spectroscopy, and electron spin resonance technique, the silicon dioxide films with embedded silicon nanocrystals (nc-Si/SiO sub(2) structures) have been investigated after gamma -irradiation with the dose 210 super(7) rad and subsequent annealing at 450 degree C in hydrogen ambient. For the first time, it was shown that such a radiation-thermal treatment results in significant increase of the luminescence intensity, in a red shift of the photoluminescence spectra, and in disappearance of the electron-spin resonance signal related to silicon broken bonds. This effect has been explained by passivation of silicon broken bonds at the nc-Si-SiO sub(2) interface with hydrogen and by generation of new luminescence centers, these centers being created at elevated temperatures due to transformation of radiation-induced defects.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-016-1744-7