Direct view of silicon initial growth on metal surfaces

• Published in: Thin solid films 2016-11, Vol.618, p.81-83
• Main Authors: Fu, Tsu-Yi, Chen, Yan-Ching, Liang, Geng-Chu, Wang, Chen-Yu, Lin, Rung-Jiun
• Format: Article
• Language: English
• Subjects: Devices; Direct current; Field ion microscopy; Graphene; Heating; Information dissemination; Initial growth; Metal surfaces; Platinum; Silicene; Silicon
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2016.07.014

Silicene, a single layer of silicon structure, has been predicted to be similar to graphene in physical properties and better than graphene in device applications. Various ways to synthesize silicene have attracted many theoretical and experimental efforts. Controlled epitaxial growth is a possible method. However, a critical growth condition limits the development of various materials. A field ion microscope with the advantages of atomic resolution and many different crystal facets on the emitter sample can provide information about the initial growth of silicon on metal surfaces in various growth conditions. Here, silicon, evaporated by direct current heating of a piece of Si wafer, was deposited onto Ir or Pt tip surfaces held at 400 to 700K. The p (3×2) superstructure of silicon forms on Ir (001) at 400K. Moreover, Si triangular structure was found on Ir (111) facets, and hexagonal structure was found on Pt (111) facets. •Provide silicon growth information in various growth conditions•Several important features for silicon on Ir or Pt tip surfaces were found.•The p(3×2) superstructure of silicon forms on Ir (001) at 400K.