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Method to evaluate afterpulsing probability in single-photon avalanche diodes

We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-depende...

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Bibliographic Details
Published in:Optics letters 2015-08, Vol.40 (16), p.3774-3777
Main Authors: Tzou, Bo-Wei, Wu, Jau-Yang, Lee, Yi-Shan, Lin, Sheng-Di
Format: Article
Language:English
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Summary:We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.40.003774