Molecular Oligogermanes and Related Compounds: Structure, Optical and Semiconductor Properties

• Published in: Chemistry, an Asian journal an Asian journal, 2017-06, Vol.12 (11), p.1240-1249
• Main Authors: Zaitsev, Kirill V., Tafeenko, Viktor A., Oprunenko, Yuri F., Kharcheva, Anastasia V., Zhanabil, Zhaisan, Suleimen, Yerlan, Lam, Kevin, Zaitsev, Vladimir B., Zaitseva, Anna V., Zaitseva, Galina S., Karlov, Sergey S.
• Format: Article
• Language: English
• Subjects: Absorbance; Chemistry; Fluorescence; Luminescence; Molecular structure; oligogermanes; Optical properties; organic semiconductors; silagermanes; Silicon; Solid state; X-ray analysis; X-ray diffraction
• ISSN: 1861-4728; 1861-471X
• DOI: 10.1002/asia.201700151

The optical (UV/Vis absorbance, fluorescence in the solid state and in solution) and semiconducting properties of a number of di‐ and trigermanes as well as related silicon‐ and tin‐containing germanes, 1–6 ((p‐Tol)3GeGeMe3 (1), Ph3SnGe(SiMe3)3 (2), (C6F5)3GeGePh3 (3), (p‐Tol)3GeSiMe2SiMe3 (4), (p‐Tol)3GeGeMe2Ge(p‐Tol)3 (5), (p‐Tol)3GeSiMe2SiMe2Ge(p‐Tol)3 (6)) were investigated. Molecular structures of 5 and 6 were studied by X‐ray diffraction analysis. All compounds displayed luminescence properties. In addition, a band gap (of about 3.3 eV) was measured for compounds 1–6 showing that those molecules display semiconductor properties. Semiconducting molecular oligogermanes: A series of molecular catenated group 14 derivatives was obtained and their structure, optical (UV/Vis absorbance, luminescence) and electrochemical properties were studied. A band gap of about 3.3 eV was measured for such compounds, indicating that these molecules have semiconductor properties.