A sapphire based monolithic integrated optrode

A novel kind of optrode fabricated on a sapphire substrate is proposed for optogenetic applications in neuroscience. Eight thin-film neural electrodes and a GaN-LED are monolithically integrated on the surface of a sapphire shank. The LED is used for optogenetic stimulation and the multiple electrod...

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Bibliographic Details
Main Authors: He Zhang, Weihua Pei, Xiaowei Yang, Xuhong Guo, Xiao Xing, Ruicong Liu, Yuanyuan Liu, Qiang Gui, Hongda Chen
Format: Conference Proceeding
Language:English
Subjects:
Electrodes
Light emitting diodes
Optical fibers
Probes
Stimulated emission
Temperature
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Summary:A novel kind of optrode fabricated on a sapphire substrate is proposed for optogenetic applications in neuroscience. Eight thin-film neural electrodes and a GaN-LED are monolithically integrated on the surface of a sapphire shank. The LED is used for optogenetic stimulation and the multiple electrodes are used for simultaneous recording of neural activities. The output power density of the LED is 1-19 mW/mm 2 at 468 nm, driving with a current from 0.7-10 mA. The mean electrochemical impedance of the eight recoding sites on the optrode at 1 kHz is 385 kΩ. The highest temperature-raise at tissue around the LED is almost 1 °C when the output power density is 3 mw/mm 2 . The monolithic integrated structure will make it a powerful tool for optogenetics.
ISSN:1557-170X
2694-0604
DOI:10.1109/EMBC.2016.7592141