A K‐band low phase noise and low power CMOS voltage‐controlled oscillator

ABSTRACT A K‐band differential cross‐coupled inductance‐ capacitance (LC) voltage‐controlled oscillator (VCO) is implemented in 0.18‐μm CMOS process. To accomplish high quality (Q) factor LC‐tank at K‐band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the c...

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Bibliographic Details
Published in:Microwave and optical technology letters 2017-02, Vol.59 (2), p.362-366
Main Authors: Tsai, Jeng‐Han, Lin, Yu‐Zhe, Kuo, Yin‐Ting
Format: Article
Language:English
Subjects:
CMOS
Electric potential
K‐band
Mathematical analysis
Microwaves
Noise
Offsets
Voltage
Voltage controlled oscillators
voltage‐controlled oscillator
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Summary:ABSTRACT A K‐band differential cross‐coupled inductance‐ capacitance (LC) voltage‐controlled oscillator (VCO) is implemented in 0.18‐μm CMOS process. To accomplish high quality (Q) factor LC‐tank at K‐band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is −109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is −185.79 dBc/Hz. At low supply voltage mode of 0.65 V, the phase noise is −106.015 dBc/Hz at 1 MHz offset and the FoM is −189.76 dBc/Hz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:362–366, 2017
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.30313