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Controllable synthesis of single crystalline Sn-based oxides and their application in perovskite solar cells
We synthesized single-crystalline Sn-based oxides for use as electron-transporting layers (ETLs) in perovskite solar cells (PSCs). The control of the Zn-to-Sn cation ratio (Zn/Sn = 0-2) in a fixed concentration of hydrazine solution leads to the formation of various types of Sn-based oxides, i.e., s...
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Published in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2017, Vol.5 (1), p.79-86 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We synthesized single-crystalline Sn-based oxides for use as electron-transporting layers (ETLs) in perovskite solar cells (PSCs). The control of the Zn-to-Sn cation ratio (Zn/Sn = 0-2) in a fixed concentration of hydrazine solution leads to the formation of various types of Sn-based oxides, i.e., spherical SnO2 and Zn2SnO4 nanoparticles (NPs), SnO2 nanorods, and Zn2SnO4 nanocubes. In particular, a ratio of Zn/Sn = 1 results in nanocomposites of single-crystalline SnO2 nanorods and Zn2SnO4 nanocubes. This is related to the concentration of free hydrazine unreacted with Zn and Sn ions in the reaction solution, because the resulting OH- concentration affects the growth rate of intermediate phases such as ZnSn(OH)6, Zn(OH)42- and Sn(OH)62-. Additionally, we propose plausible pathways for the formation of Sn-based oxides in hydrazine solution. The Sn-based oxides are applied as ETLs and annealed at a low temperature below 150 degree C in PSCs. The PSCs fabricated by using the nanocomposite ETLs consisting of single-crystalline SnO2 nanorods and Zn2SnO4 nanocubes exhibit superior device performance to TiO2-based PSCs due to their excellent charge collection ability and optical properties, achieving a power conversion efficiency of greater than or equal to 17%. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/c6ta08565b |