Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency

We investigated the optical, electrical, and structural properties of epitaxially grown Ge-on-Si substrates after phosphorous implantation. Ion implantation increases n-type doping in Ge for an on-chip light source. However, its effects on Ge should be carefully studied as implantation may increase...

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Bibliographic Details
Published in:Optical materials express 2016-09, Vol.6 (9), p.2939-2946
Main Authors: Baek, Jiwoong, Ki, Bugeun, Kim, Daeik, Lee, Chulwon, Nam, Donguk, Cho, Yong-Hoon, Oh, Jungwoo
Format: Article
Language:English
Subjects:
Doping
Efficiency
Epitaxial growth
Implantation
Light sources
Optical properties
Phosphorus
Photoluminescence
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Summary:We investigated the optical, electrical, and structural properties of epitaxially grown Ge-on-Si substrates after phosphorous implantation. Ion implantation increases n-type doping in Ge for an on-chip light source. However, its effects on Ge should be carefully studied as implantation may increase the recombination sites, and possibly reduce light-emitting efficiency. We studied the light-emitting efficiency of implanted Ge using various material characterizations. We found that phosphorous implantation increased the doping concentration of in situ doped Ge-on-Si, which boosted the photoluminescence by 12-30%. It is therefore critical to optimize the post-annealing and implantation doses to increase light-emitting efficiency of Ge.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.6.002939