Numerical characterization of InP-based quantum dot semiconductor optical amplifier

This paper is devoted to the development of a steady-state behavior of a quantum dot-semiconductor optical amplifier (QD-SOA). The investigated performance characteristics cover a wide range that includes material gain coefficient, spatial distribution of the occupation probabilities, fiber to fiber...

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Bibliographic Details
Published in:Applied optics (2004) 2016-12, Vol.55 (35), p.9978-9985
Main Authors: Nawwar, Omnia M, Emara, Ahmed, Aly, Moustafa H, Okaz, Ali M
Format: Article
Language:English
Subjects:
Amplification
Devices
Fibers
Gain
Mathematical analysis
Mathematical models
Occupation
Qunatum dots
Semiconductor optical amplifiers
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Summary:This paper is devoted to the development of a steady-state behavior of a quantum dot-semiconductor optical amplifier (QD-SOA). The investigated performance characteristics cover a wide range that includes material gain coefficient, spatial distribution of the occupation probabilities, fiber to fiber gain, gain spectrum as a function of the bias current, relaxation time, and capture time. A set of traveling-wave equations is used to model the signal and spontaneous photons along the device active region. The obtained results indicate a high gain that reaches 34 dB for an InAs/InGaAsP/InP-based QD-SOA, with a corresponding device length of 4 mm. The obtained signal-to-noise ratio is larger than 75 dB for all input powers without using an output filter.
ISSN:1559-128X
2155-3165
DOI:10.1364/AO.55.009978