Parametric modeling of the dielectric functions of InAs x P1- x alloy films on InP

We report an analytic expression that accurately represents the dielectric functions epsilon = epsilon 1 + i epsilon 2 from 1.5 to 6.0eV of InAs x P1- x alloy films over the entire composition range 0 less than or equal to x less than or equal to 1. We use the parametric model (PM), which describes...

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Bibliographic Details
Published in:Thin solid films 2014-05, Vol.558, p.438-442
Main Authors: Byun, J S, Kim, T J, Hwang, SY, Kang, Y R, Park, J C, Kim, Y D
Format: Article
Language:English
Subjects:
Dielectrics
Exact solutions
Indium arsenides
Mathematical analysis
Mathematical models
Polynomials
Spectra
Thin films
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Summary:We report an analytic expression that accurately represents the dielectric functions epsilon = epsilon 1 + i epsilon 2 from 1.5 to 6.0eV of InAs x P1- x alloy films over the entire composition range 0 less than or equal to x less than or equal to 1. We use the parametric model (PM), which describes the dielectric functions of semiconductor materials as a sum of Gaussian-broadened polynomials. The dielectric function spectra are those that we obtained previously by spectroscopic ellipsometry for the specific compositions x =0.00, 0.13, 0.40, 0.60, 0.80, and 1.00. The PM reconstructions are in excellent agreement with the data. With the information provided here, dielectric functions of arbitrary compositions can be calculated.
ISSN:0040-6090
DOI:10.1016/j.tsf.2014.03.049