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Room temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputtering

High-power impulse magnetron sputtering (HiPIMS) was used to deposit titanium nitride (TiN) thin films with high electron density as alternative plasmonic materials. TiN thin films with thicknesses of 20-40 nm were deposited with different average sputtering powers, and exhibited metallic- and diele...

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Bibliographic Details
Published in:Optical materials express 2016-02, Vol.6 (2), p.540-551
Main Authors: Yang, Zih-Ying, Chen, Yi-Hsun, Liao, Bo-Huei, Chen, Kuo-Ping
Format: Article
Language:English
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Summary:High-power impulse magnetron sputtering (HiPIMS) was used to deposit titanium nitride (TiN) thin films with high electron density as alternative plasmonic materials. TiN thin films with thicknesses of 20-40 nm were deposited with different average sputtering powers, and exhibited metallic- and dielectric-like optical properties. When the sputtering power was increased from 80 W to 300 W, denser polycrystalline TiN thin films were obtained at room temperature (RT) with a conductivity 25 times that of the low-sputtering-power film. With sufficient average power (> or = 180 W), the films exhibited metallic-like optical properties, and a conductivity of >10 super(5) S/m. By using HiPIMS deposition, good-quality metallic-like TiN thin films could be fabricated at RT without heating the substrate.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.6.000540