Ab Initio Study of Deformation Influence on the Electronic Properties of Graphene Structures Containing One-Dimensional Topological Defects

The band structures of single and bilayer graphene with one-dimensional topological defects were calculated along the defect line, and appearance of the flat band near the Fermi level was observed. In addition, the influence of deformation (compression/expansion) on the flat band was studied. It was...

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Bibliographic Details
Published in:Journal of low temperature physics 2016-12, Vol.185 (5-6), p.712-716
Main Authors: Valishina, A. A., Lysogorskiy, Y. V., Nedopekin, O. V., Tayurskii, D. A.
Format: Article
Language:English
Subjects:
Band structure of solids
Banded structure
Bilayers
Characterization and Evaluation of Materials
Compressing
Condensed Matter Physics
Crystal defects
Deformation
Fermi level
Fermi surfaces
Grain boundaries
Graphene
Low temperature physics
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Stretching
Topology
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Summary:The band structures of single and bilayer graphene with one-dimensional topological defects were calculated along the defect line, and appearance of the flat band near the Fermi level was observed. In addition, the influence of deformation (compression/expansion) on the flat band was studied. It was shown that compression across the grain boundary leads to disappearance of the flat band near the Fermi level, while the stretching along this direction does not significantly change the band structure. However, neither compression nor stretching along the grain boundary destroys the flat band.
ISSN:0022-2291
1573-7357
DOI:10.1007/s10909-016-1664-z