Mapping of Au/a‐IGZO Schottky contacts by using scanning internal photoemission microscopy

We have demonstrated scanning internal photoemission microscopy to characterize the degradation of Au/amorphous In–Ga–Zn–O Schottky contacts. After applying a reverse voltage stress of −30 V, the current–voltage characteristics became leaky and a local degradation of the contacts was clearly visuali...

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Published in:Physica Status Solidi. B: Basic Solid State Physics 2017-02, Vol.254 (2), p.np-n/a
Main Authors: Shiojima, Kenji, Shingo, Masato
Format: Article
Language:English
Subjects:
amorphous materials
Contact
Degradation
InGaZnO
Microscopy
Photoelectric effect
Photoemission
Scanning
scanning internal photoemission microscopy
Schottky contacts
Semiconductors
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description We have demonstrated scanning internal photoemission microscopy to characterize the degradation of Au/amorphous In–Ga–Zn–O Schottky contacts. After applying a reverse voltage stress of −30 V, the current–voltage characteristics became leaky and a local degradation of the contacts was clearly visualized in a photocurrent image, while no symptom of the degradation was observed in the optical microscope image. In addition, it was found that Schottky barrier height decreased by 0.1 eV in the degraded region. Thus, we conclude that this method gives quantitative and visual information on the underlying thin‐film transparency metal/semiconductor interfaces.
doi_str_mv 10.1002/pssb.201600587
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subjects amorphous materials
Contact
Degradation
InGaZnO
Microscopy
Photoelectric effect
Photoemission
Scanning
scanning internal photoemission microscopy
Schottky contacts
Semiconductors
title Mapping of Au/a‐IGZO Schottky contacts by using scanning internal photoemission microscopy
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