Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires (Phys. Status Solidi A 2∕2017)

GaN quantum nanowire based devices are predicted to provide a host of benefits owing to two-dimensional confinement. However, the regular patterned formation of nanowires which actually show quantum confined effects has remained a daunting challenge for GaN. Here, Kumar et al. (article No. 1600620 )...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2017-02, Vol.214 (2), p.1770107-n/a
Main Authors: Kumar, Akhil S., Khachariya, Dolar, Meer, Mudassar, Ganguly, Swaroop, Saha, Dipankar
Format: Article
Language:English
Subjects:
Arrays
Capacitance
Confinement
Devices
Gates
Lithosphere
Nanowires
Panels
Transport
Online Access:Get full text
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Summary:GaN quantum nanowire based devices are predicted to provide a host of benefits owing to two-dimensional confinement. However, the regular patterned formation of nanowires which actually show quantum confined effects has remained a daunting challenge for GaN. Here, Kumar et al. (article No. 1600620 ) demonstrate that an array of regular patterned lateral nanowires of aspect ratio > 10 super(3) or higher with width
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201770107