Ultrasensitive Vertical Piezotronic Transistor Based on ZnO Twin Nanoplatelet

High sensitivity of pressure/strain sensors is the key to accurately evaluating external mechanical stimuli and could become more important in future generations of human–machine interfaces and artificial skin. Here we report the study of a two-terminal piezotronic transistor based on ZnO twin nanop...

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Bibliographic Details
Published in:ACS nano 2017-05, Vol.11 (5), p.4859-4865
Main Authors: Wang, Longfei, Liu, Shuhai, Feng, Xiaolong, Xu, Qi, Bai, Suo, Zhu, Laipan, Chen, Libo, Qin, Yong, Wang, Zhong Lin
Format: Article
Language:English
Subjects:
High-Energy Shock Waves - therapeutic use
Humans
Metals - chemistry
Nanostructures - chemistry
Nanotechnology - instrumentation
Nanowires
Pressure
Semiconductors
Zinc Oxide - chemistry
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Summary:High sensitivity of pressure/strain sensors is the key to accurately evaluating external mechanical stimuli and could become more important in future generations of human–machine interfaces and artificial skin. Here we report the study of a two-terminal piezotronic transistor based on ZnO twin nanoplatelets (TNPT). Owing to the mirror symmetrical structure of ZnO twin nanplatelet, compressive pressure-induced positive piezoelectric polarization charges created at both metal–semiconductor interfaces can simultaneously lower both Schottky barrier heights and thus significantly modulate the carrier transport. Our device exhibits the highest pressure sensitivity of 1448.08–1677.53 meV/MPa, which is more than ∼20 times larger than the highest value reported previously, and a fast response time of
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.7b01374