Piezoresistive Effect in Plasma-Doping of Graphene Sheet for High-Performance Flexible Pressure Sensing Application

This paper presents a straightforward plasma treatment modification of graphene with an enhanced piezoresistive effect for the realization of a high-performance pressure sensor. The changes in the graphene in terms of its morphology, structure, chemical composition, and electrical properties after t...

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Published in:ACS applied materials & interfaces 2017-05, Vol.9 (17), p.15192-15201
Main Authors: Haniff, M. A. S. M, Hafiz, S. M, Huang, N. M, Rahman, S. A, Wahid, K. A. A, Syono, M. I, Azid, I. A
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creator Haniff, M. A. S. M
Hafiz, S. M
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description This paper presents a straightforward plasma treatment modification of graphene with an enhanced piezoresistive effect for the realization of a high-performance pressure sensor. The changes in the graphene in terms of its morphology, structure, chemical composition, and electrical properties after the NH3/Ar plasma treatment were investigated in detail. Through a sufficient plasma treatment condition, our studies demonstrated that plasma-treated graphene sheet exhibits a significant increase in sensitivity by one order of magnitude compared to that of the unmodified graphene sheet. The plasma-doping introduced nitrogen (N) atoms inside the graphene structure and was found to play a significant role in enhancing the pressure sensing performance due to the tunneling behavior from the localized defects. The high sensitivity and good robustness demonstrated by the plasma-treated graphene sensor suggest a promising route for simple, low-cost, and ultrahigh resolution flexible sensors.
doi_str_mv 10.1021/acsami.7b02833
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title Piezoresistive Effect in Plasma-Doping of Graphene Sheet for High-Performance Flexible Pressure Sensing Application
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