High Speed Epitaxial Perovskite Memory on Flexible Substrates

Single‐crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2017-03, Vol.29 (11), p.np-n/a
Main Authors: Bakaul, Saidur R., Serrao, Claudy R., Lee, Oukjae, Lu, Zhongyuan, Yadav, Ajay, Carraro, Carlo, Maboudian, Roya, Ramesh, Ramamoorthy, Salahuddin, Sayeef
Format: Article
Language:English
Subjects:
complex oxides
Data storage
Electric potential
Endurance
Epitaxy
Ferroelectric materials
ferroelectrics
flexible electronics
High speed
Materials science
Memory devices
Oxides
Perovskite
Perovskites
Single crystals
Substrates
Switching
Terminals
Voltage
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Summary:Single‐crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201605699