Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms...

Full description

Saved in:
Bibliographic Details
Published in:Journal of communications technology & electronics 2017-03, Vol.62 (3), p.309-313
Main Authors: Burlakov, I. D., Boltar, K. O., Vlasov, P. V., Lopukhin, A. A., Toropov, A. I., Zhuravlev, K. S., Fadeev, V. V.
Format: Article
Language:English
Subjects:
Arrays
Articles from the Russian Journal Prikladnaya Fizika
Background radiation
Communications Engineering
Communications technology
Comparative analysis
Electronics
Engineering
Epitaxial layers
Epitaxy
Focal plane
Indium
Indium antimonide
Indium antimonides
Intermetallics
Investigations
Molecular beam epitaxy
Networks
Noise
Photoelectricity
Photovoltaic cells
Physics
Studies
Substrates
Systems design
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226917030068