Epitaxial structures for InGaAs/InP avalanche photodiodes

The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuri...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2017-03, Vol.62 (3), p.304-308
Main Authors: Budtolaev, A. K., Khakuashev, P. E., Chinareva, I. V., Gorlachuk, P. V., Ladugin, M. A., Marmaluk, A. A., Ryaboshtan, Yu. L., Yarotskaya, I. V.
Format: Article
Language:English
Subjects:
Articles from the Russian Journal Prikladnaya Fizika
Avalanches
Communications Engineering
Communications technology
Dependence
Devices
Efficiency
Electric fields
Electronics
Engineering
Epitaxy
Heterostructures
Hydrides
Networks
Parameters
Photodiodes
Photovoltaic cells
Studies
Systems design
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Summary:The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226917030056