Epitaxial structures for InGaAs/InP avalanche photodiodes

The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuri...

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Published in:Journal of communications technology & electronics 2017-03, Vol.62 (3), p.304-308
Main Authors: Budtolaev, A. K., Khakuashev, P. E., Chinareva, I. V., Gorlachuk, P. V., Ladugin, M. A., Marmaluk, A. A., Ryaboshtan, Yu. L., Yarotskaya, I. V.
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Language:English
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Articles from the Russian Journal Prikladnaya Fizika
Avalanches
Communications Engineering
Communications technology
Dependence
Devices
Efficiency
Electric fields
Electronics
Engineering
Epitaxy
Heterostructures
Hydrides
Networks
Parameters
Photodiodes
Photovoltaic cells
Studies
Systems design
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container_issue 3
container_start_page 304
container_title Journal of communications technology & electronics
container_volume 62
creator Budtolaev, A. K.
Khakuashev, P. E.
Chinareva, I. V.
Gorlachuk, P. V.
Ladugin, M. A.
Marmaluk, A. A.
Ryaboshtan, Yu. L.
Yarotskaya, I. V.
description The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.
doi_str_mv 10.1134/S1064226917030056
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fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_miscellaneous_1893900876</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A497909396</galeid><sourcerecordid>A497909396</sourcerecordid><originalsourceid>FETCH-LOGICAL-c411t-c178eb493d1a724791089869f1bb04d124b6e47ff6a4d306370ad8337b94983c3</originalsourceid><addsrcrecordid>eNp1kU1r3DAQhk1pofnoD-jNkEsCdTJjyZJ1XEKSLgQamuRsZFneVfBaG40ckn9fLe4h21AEktA8z8uIybLvCOeIjF_cIwhelkKhBAZQiU_ZAVZVVYiqkp_TPZWLXf1rdkj0BMCUAHaQqauti_rV6SGnGCYTp2Ap733Il-ONXtDFcrzL9Yse9GjWNt-uffSd852l4-xLrwey3_6eR9nj9dXD5c_i9tfN8nJxWxiOGAuDsrYtV6xDLUsuFUKtaqF6bFvgHZa8FZbLvheadwwEk6C7mjHZKq5qZthRdjrnboN_nizFZuPI2CF1ZP1EDdaKKYBaioSe_IM--SmMqbtE1ciBCakSdT5TKz3Yxo29j0GbtDq7ccaPtnfpfcGVVJCid7Fne0Jion2NKz0RNcv73_vsj3dsO5EbLaWN3GodaVb2cJxxEzxRsH2zDW6jw1uD0OwG23wYbHLK2aHEjisb3v3yv9IfJsygdw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1881403679</pqid></control><display><type>article</type><title>Epitaxial structures for InGaAs/InP avalanche photodiodes</title><source>ABI/INFORM Global</source><source>Springer Nature:Jisc Collections:Springer Nature Read and Publish 2023-2025: Springer Reading List</source><creator>Budtolaev, A. K. ; Khakuashev, P. E. ; Chinareva, I. V. ; Gorlachuk, P. V. ; Ladugin, M. A. ; Marmaluk, A. A. ; Ryaboshtan, Yu. L. ; Yarotskaya, I. V.</creator><creatorcontrib>Budtolaev, A. K. ; Khakuashev, P. E. ; Chinareva, I. V. ; Gorlachuk, P. V. ; Ladugin, M. A. ; Marmaluk, A. A. ; Ryaboshtan, Yu. L. ; Yarotskaya, I. V.</creatorcontrib><description>The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.</description><identifier>ISSN: 1064-2269</identifier><identifier>EISSN: 1555-6557</identifier><identifier>DOI: 10.1134/S1064226917030056</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Articles from the Russian Journal Prikladnaya Fizika ; Avalanches ; Communications Engineering ; Communications technology ; Dependence ; Devices ; Efficiency ; Electric fields ; Electronics ; Engineering ; Epitaxy ; Heterostructures ; Hydrides ; Networks ; Parameters ; Photodiodes ; Photovoltaic cells ; Studies ; Systems design</subject><ispartof>Journal of communications technology &amp; electronics, 2017-03, Vol.62 (3), p.304-308</ispartof><rights>Pleiades Publishing, Inc. 2017</rights><rights>COPYRIGHT 2017 Springer</rights><rights>Journal of Communications Technology and Electronics is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/1881403679?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,11688,27924,27925,36060,36061,44363</link.rule.ids></links><search><creatorcontrib>Budtolaev, A. K.</creatorcontrib><creatorcontrib>Khakuashev, P. E.</creatorcontrib><creatorcontrib>Chinareva, I. V.</creatorcontrib><creatorcontrib>Gorlachuk, P. V.</creatorcontrib><creatorcontrib>Ladugin, M. A.</creatorcontrib><creatorcontrib>Marmaluk, A. A.</creatorcontrib><creatorcontrib>Ryaboshtan, Yu. L.</creatorcontrib><creatorcontrib>Yarotskaya, I. V.</creatorcontrib><title>Epitaxial structures for InGaAs/InP avalanche photodiodes</title><title>Journal of communications technology &amp; electronics</title><addtitle>J. Commun. Technol. Electron</addtitle><description>The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.</description><subject>Articles from the Russian Journal Prikladnaya Fizika</subject><subject>Avalanches</subject><subject>Communications Engineering</subject><subject>Communications technology</subject><subject>Dependence</subject><subject>Devices</subject><subject>Efficiency</subject><subject>Electric fields</subject><subject>Electronics</subject><subject>Engineering</subject><subject>Epitaxy</subject><subject>Heterostructures</subject><subject>Hydrides</subject><subject>Networks</subject><subject>Parameters</subject><subject>Photodiodes</subject><subject>Photovoltaic cells</subject><subject>Studies</subject><subject>Systems design</subject><issn>1064-2269</issn><issn>1555-6557</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>M0C</sourceid><recordid>eNp1kU1r3DAQhk1pofnoD-jNkEsCdTJjyZJ1XEKSLgQamuRsZFneVfBaG40ckn9fLe4h21AEktA8z8uIybLvCOeIjF_cIwhelkKhBAZQiU_ZAVZVVYiqkp_TPZWLXf1rdkj0BMCUAHaQqauti_rV6SGnGCYTp2Ap733Il-ONXtDFcrzL9Yse9GjWNt-uffSd852l4-xLrwey3_6eR9nj9dXD5c_i9tfN8nJxWxiOGAuDsrYtV6xDLUsuFUKtaqF6bFvgHZa8FZbLvheadwwEk6C7mjHZKq5qZthRdjrnboN_nizFZuPI2CF1ZP1EDdaKKYBaioSe_IM--SmMqbtE1ciBCakSdT5TKz3Yxo29j0GbtDq7ccaPtnfpfcGVVJCid7Fne0Jion2NKz0RNcv73_vsj3dsO5EbLaWN3GodaVb2cJxxEzxRsH2zDW6jw1uD0OwG23wYbHLK2aHEjisb3v3yv9IfJsygdw</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Budtolaev, A. K.</creator><creator>Khakuashev, P. E.</creator><creator>Chinareva, I. V.</creator><creator>Gorlachuk, P. V.</creator><creator>Ladugin, M. A.</creator><creator>Marmaluk, A. A.</creator><creator>Ryaboshtan, Yu. L.</creator><creator>Yarotskaya, I. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>N95</scope><scope>XI7</scope><scope>ISR</scope><scope>3V.</scope><scope>7SP</scope><scope>7WY</scope><scope>7WZ</scope><scope>7XB</scope><scope>87Z</scope><scope>88I</scope><scope>88K</scope><scope>8AO</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8FL</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BEZIV</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>FRNLG</scope><scope>F~G</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>K60</scope><scope>K6~</scope><scope>L.-</scope><scope>L7M</scope><scope>M0C</scope><scope>M2P</scope><scope>M2T</scope><scope>P5Z</scope><scope>P62</scope><scope>PQBIZ</scope><scope>PQBZA</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PYYUZ</scope><scope>Q9U</scope></search><sort><creationdate>20170301</creationdate><title>Epitaxial structures for InGaAs/InP avalanche photodiodes</title><author>Budtolaev, A. K. ; Khakuashev, P. E. ; Chinareva, I. V. ; Gorlachuk, P. V. ; Ladugin, M. A. ; Marmaluk, A. A. ; Ryaboshtan, Yu. L. ; Yarotskaya, I. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-c178eb493d1a724791089869f1bb04d124b6e47ff6a4d306370ad8337b94983c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Articles from the Russian Journal Prikladnaya Fizika</topic><topic>Avalanches</topic><topic>Communications Engineering</topic><topic>Communications technology</topic><topic>Dependence</topic><topic>Devices</topic><topic>Efficiency</topic><topic>Electric fields</topic><topic>Electronics</topic><topic>Engineering</topic><topic>Epitaxy</topic><topic>Heterostructures</topic><topic>Hydrides</topic><topic>Networks</topic><topic>Parameters</topic><topic>Photodiodes</topic><topic>Photovoltaic cells</topic><topic>Studies</topic><topic>Systems design</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Budtolaev, A. K.</creatorcontrib><creatorcontrib>Khakuashev, P. E.</creatorcontrib><creatorcontrib>Chinareva, I. V.</creatorcontrib><creatorcontrib>Gorlachuk, P. V.</creatorcontrib><creatorcontrib>Ladugin, M. A.</creatorcontrib><creatorcontrib>Marmaluk, A. A.</creatorcontrib><creatorcontrib>Ryaboshtan, Yu. L.</creatorcontrib><creatorcontrib>Yarotskaya, I. V.</creatorcontrib><collection>CrossRef</collection><collection>Gale Business: Insights</collection><collection>Business Insights: Essentials</collection><collection>Gale In Context: Science</collection><collection>ProQuest Central (Corporate)</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Access via ABI/INFORM (ProQuest)</collection><collection>ABI/INFORM Global (PDF only)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>ABI/INFORM Global (Alumni Edition)</collection><collection>Science Database (Alumni Edition)</collection><collection>Telecommunications (Alumni Edition)</collection><collection>ProQuest Pharma Collection</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ABI/INFORM Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Business Premium Collection</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Business Premium Collection (Alumni)</collection><collection>ABI/INFORM Global (Corporate)</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Business Collection (Alumni Edition)</collection><collection>ProQuest Business Collection</collection><collection>ABI/INFORM Professional Advanced</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ABI/INFORM Global</collection><collection>Science Database</collection><collection>Telecommunications Database</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest One Business</collection><collection>ProQuest One Business (Alumni)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ABI/INFORM Collection China</collection><collection>ProQuest Central Basic</collection><jtitle>Journal of communications technology &amp; electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Budtolaev, A. K.</au><au>Khakuashev, P. E.</au><au>Chinareva, I. V.</au><au>Gorlachuk, P. V.</au><au>Ladugin, M. A.</au><au>Marmaluk, A. A.</au><au>Ryaboshtan, Yu. L.</au><au>Yarotskaya, I. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial structures for InGaAs/InP avalanche photodiodes</atitle><jtitle>Journal of communications technology &amp; electronics</jtitle><stitle>J. Commun. Technol. Electron</stitle><date>2017-03-01</date><risdate>2017</risdate><volume>62</volume><issue>3</issue><spage>304</spage><epage>308</epage><pages>304-308</pages><issn>1064-2269</issn><eissn>1555-6557</eissn><abstract>The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1064226917030056</doi><tpages>5</tpages></addata></record>
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source ABI/INFORM Global; Springer Nature:Jisc Collections:Springer Nature Read and Publish 2023-2025: Springer Reading List
subjects Articles from the Russian Journal Prikladnaya Fizika
Avalanches
Communications Engineering
Communications technology
Dependence
Devices
Efficiency
Electric fields
Electronics
Engineering
Epitaxy
Heterostructures
Hydrides
Networks
Parameters
Photodiodes
Photovoltaic cells
Studies
Systems design
title Epitaxial structures for InGaAs/InP avalanche photodiodes
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T04%3A18%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Epitaxial%20structures%20for%20InGaAs/InP%20avalanche%20photodiodes&rft.jtitle=Journal%20of%20communications%20technology%20&%20electronics&rft.au=Budtolaev,%20A.%20K.&rft.date=2017-03-01&rft.volume=62&rft.issue=3&rft.spage=304&rft.epage=308&rft.pages=304-308&rft.issn=1064-2269&rft.eissn=1555-6557&rft_id=info:doi/10.1134/S1064226917030056&rft_dat=%3Cgale_proqu%3EA497909396%3C/gale_proqu%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c411t-c178eb493d1a724791089869f1bb04d124b6e47ff6a4d306370ad8337b94983c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1881403679&rft_id=info:pmid/&rft_galeid=A497909396&rfr_iscdi=true