Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Lattice‐symmetry‐driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar‐patterned GaN templates using molecular beam epitaxy. High‐resolution transmission electron microscopy confirms that tw...

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Bibliographic Details
Published in:Advanced functional materials 2017-03, Vol.27 (9), p.np-n/a
Main Authors: Wang, Ping, Wang, Xinqiang, Wang, Tao, Tan, Chih‐Shan, Sheng, Bowen, Sun, Xiaoxiao, Li, Mo, Rong, Xin, Zheng, Xiantong, Chen, Zhaoying, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Jian, Zhang, Xixiang, Shen, Bo
Format: Article
Language:English
Subjects:
Adatoms
Diffusion
Electrons
Epitaxial growth
Epitaxy
gallium nitride
Gallium nitrides
hierarchical nanotripods
High resolution
lattice symmetry
Materials science
microstructures
Molecular beam epitaxy
Nanostructure
Nanowires
Polarity
Quantum dots
Symmetry
Transformations
Transmission electron microscopy
Wurtzite
Zincblende
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Summary:Lattice‐symmetry‐driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar‐patterned GaN templates using molecular beam epitaxy. High‐resolution transmission electron microscopy confirms that two kinds of lattice‐symmetry, wurtzite (wz) and zinc‐blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N‐polarity. The zb‐GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices. Lattice‐symmetry‐driven epitaxy of hierarchical GaN nanotripods is demonstrated using molecular beam epitaxy on pillar‐patterned GaN templates. The periodical transformation between wz and zb phases drives the appearance of the hierarchical nanotripods. The formation of zb‐GaN can be suppressed by increasing the growth temperature, and the nanotripods are entirely eliminated at temperature above 850 °C.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201604854