Abnormal variation of the growth rate under high NH sub(3) injected regime in the growth of GaN by NH sub(3)-source MBE

Unusual growth-rate variation during GaN formation using gas-source MBE has been discussed with respect to the chemical reactions occurring in the transition layer. A series of samples were prepared to confirm the assumption by verifying the growth regime and the impacts on the crystal quality of th...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2017-03, Vol.56 (3), p.035504-035504
Main Authors: Choi, Sungkuk, Jung, Soohoon, Cho, Youngji, Lee, Sangtae, Chang, Jiho
Format: Article
Language:English
Subjects:
Flux
Formations
Luminescence
Migration
Optical properties
Photoluminescence
Spectra
Transition layers
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Unusual growth-rate variation during GaN formation using gas-source MBE has been discussed with respect to the chemical reactions occurring in the transition layer. A series of samples were prepared to confirm the assumption by verifying the growth regime and the impacts on the crystal quality of the GaN film. We found that the growth rate can be varied along with the amount of NH sub(3) supply even under NH sub(3)-rich condition with a fixed Ga flux. Two growth conditions were investigated for their impact on the transition layer. One was the atomic force microscopy result, which revealed that the adatom migration length is closely related to the transition layer formation. The other one is the photoluminescent spectra, which revealed that the luminescence property of GaN is strongly related to the transition layer.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.035504