Spectrally resolved localized states in GaAs sub(1-x) Bi sub(x)

The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs sub(1-x) Bi sub(x). In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs sub(1-x)...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2017-03, Vol.56 (3), p.035801-035801
Main Authors: Christian, Theresa M, Alberi, Kirstin, Beaton, Daniel A, Fluegel, Brian, Mascarenhas, Angelo
Format: Article
Language:English
Subjects:
Band structure of solids
Conduction band
Evolution
Free electrons
Photoluminescence
Red shift
Spectra
Spectroscopy
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Summary:The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs sub(1-x) Bi sub(x). In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs sub(1-x) Bi sub(x). Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x= 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs sub(1-x) Bi sub(x) alloys.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.035801