Influence of Ti doping on the performance of a ZnO-based photodetector

We study the influence of Ti doping on the photodetection properties of zinc oxide (ZnO) thin films. The pure ZnO and ZnO:3%Ti (TZO) films were deposited on Si substrates by using DC-unbalanced magnetron sputtering. From the scanning electron microscopy (SEM) images, the TZO film grows more homogene...

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Bibliographic Details
Published in:Materials research express 2017-02, Vol.4 (2), p.24001-024001
Main Authors: Nurfani, E, Zuhairah, N, Kurniawan, R, Muhammady, S, Sutjahja, I M, Winata, T, Darma, Y
Format: Article
Language:English
Subjects:
Dopants
Doping
photodetector
Photodetectors
Scanning electron microscopy
Silicon substrates
Spectra
Ti-doped ZnO
Titanium
Zinc oxide
zinc oxide thin film
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Summary:We study the influence of Ti doping on the photodetection properties of zinc oxide (ZnO) thin films. The pure ZnO and ZnO:3%Ti (TZO) films were deposited on Si substrates by using DC-unbalanced magnetron sputtering. From the scanning electron microscopy (SEM) images, the TZO film grows more homogeneously in comparison with the pure ZnO structure. We suggest that Ti dopants play a role in uniformly distributing ZnO elements from the sputtering target to the Si substrate. The transmittance spectra of the Fourier transform infrared spectroscopy show a peak splitting of Zn-O stretching in the TZO film, which is also related to the dopant-modified film morphology. X-ray diffraction (XRD) spectra show that the Ti dopants also change the main ZnO crystal orientation from (0 0 2) to (1 0 3). The ZnO and TZO film-based photodetectors were fabricated by using a metal-semiconductor-metal planar configuration with Ag as the metal contact. Based on the I-V characteristics, Ti doping in the ZnO system reduces the dark current and induces the enhancement of the photo-to-dark-current ratio. Our study shows the important role of Ti doping on the improvement of photodetection performance.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/aa5773